MS Teams, 4th September 2024, 11am BST

Duration: 1 hour

Invite details will be sent after registration.

Overview

In this webinar we will show how GaN is providing superior performance transistors. We will discuss the basic structure of the EPC eGaN FET and ICs and the key differences and advantages over silicon MOSFETs. We will describe briefly the key layout and thermal design techniques to take full advantage of the speed of GaN. Finally, we will briefly introduce the applications for which GaN is best suited.

Presenter

Tiziano Morganti Senior Field Application Engineer for EMEA, Efficient Power Conversion (EPC).

Tiziano Morganti received his Ph.D., (2006) in Electronic Systems Design from Università degli Studi di Firenze. With over 20 years in the power electronics industry, Tiziano has held roles as an Electronic Design Engineer, Electrical Engineering Team Leader, System Design Engineer, and GaN HEMT-based inverter concept and design leader of a 2kW inverter submitted to the Google Little Box Challenge competition.