STMicroelectronics introduces micro-Ohm power MOSFET to boost efficiency in paralleled server power supplies

STMicroelectronics has announced a new power MOSFET – the STV300NH02L – featuring exceptionally low, micro-Ohm ON-resistance to reduce losses and increase efficiency in demanding power supply systems. This new high-current N-channel device is intended particularly for the paralleling configuration power supplies that are widely used to increase system reliability in server applications.

ST has developed an innovative ribbon-bonding technology that delivers a low typical Rds(on) of 800 micro-Ohms (0.8-mOhm), setting a new industry bench­mark for high-current MOSFETs. The 20V device, which is also ideal for reducing secondary rectification losses in high-efficiency DC‑DC converters, provides excellent protection under short-circuit conditions, with a very low turn-off time.

Paralleling of power supplies is frequently used to provide redundancy in critical systems or to increase capacity. Originally, diodes were used for this function, but they have been replaced by MOSFETs to achieve higher performance. Now, the very low losses of the STV300NH02L deliver a further significant step forward in power-supply efficiency.

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