STMicroelectronics introduce a fast recovery 600V FDmesh™ II Power MOSFET with a world beating RDS(on) figure

The new STW55NM60ND delivers a worldwide best RDS(on), among the fast recovery diode devices in the TO-247 package, with a value of less than 0.06 Ohms. Other key features include extremely low input and output capacitances, reduced recovery time (trr) and charge (Qrr), and an extremely high dynamic dv/dt (40V/ns). The STW55NM60ND is also gate charge minimized and 100% avalanche tested.

FDmesh II devices belong to the second generation of MDmesh technology, which associates a new vertical structure to the company’s strip layout and combines all of the advantages of reduced on-resistance and fast switching with an intrinsic fast recovery body diode. Their competitive conduction, switching performances and faster diode recovery phase, make them particularly suited for hard switching full-bridge topologies in the primary side sections of SMPSs for servers, solar inverters and HID lighting applications.

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