Diodes' MOSFET packages save space and raise charger performance 

Diodes Incorporated has introduced dual device combinations in thermally efficient ultra small DFN packaging.

The DMS2220LFDB and DMS2120LFWB co-package a 20V P-channel enhancement mode MOSFET with a companion diode in a choice of 2mmx2mm DFN2020 and 3mmx2mm DFN3020 packages.  The DMP2160UFDB, co-packages two of the same MOSFETs in the DFN2020 format.

Compared to larger 3mmx3mm footprint packages traditionally used in portable application designs, the DFN2020 takes 55% less PCB space, and with an off-board height of just 0.5mm the package is also 50% thinner, suiting next generation product design.  The MOSFETs used in these packages feature low gate charge and a typical RDS(ON), of 86mΩ at VGS of 1.8V, ensuring both switching and on state losses are minimised.

To further help improve efficiency, the type of diode employed in these packages is Diodes’ own high performance Super Barrier Rectifier (SBR).  With a typical low forward voltage of just 0.42V, the SBR offers a significant reduction in power dissipation compared to conventional Schottky diodes.

For more information, or details on the full range of Diodes Inc. products available from Anglia please call +44 (0)1945 474747 or email info@anglia.com

Alternatively, click on this link to go to the main Diodes Inc. section where you can view other news articles and product data.

back to product news

Bookmark with: info?

Delicious Digg Reddit Facebook StumbleUpon Google Newsvine Yahoo Show more