Mitsubishi releases a new 50W GaAs FET high power amplifier for WiMAX base stations

Mitsubishi Electric Corporation has announced the introduction of their new 50W GaAs FET amplifier, the MGFC47B3538B, which offers greater performance with less power consumption in 3.6GHz WiMAX Base Station applications.

The new High Power Amplifier features an 8dB reduction in distortion - an overall improvement of 83% on previous devices. At the same time, the MGFC47B3538 gives a reduction in power consumption of 33% when operated in the 3.5 to 3.8GHz range at 37dB power output.

This significant improvement in performance is a result of utilising a newly designed internally impedance-matched circuit, a FET chip optimised for the 3.6GHz band, and a quiescent drain current of just 1.5A at a gate series resistance of 5 ohms.

With an EVM (Error Vector Magnitude) of only 2% a very high accuracy of OFDM (Orthogonal Frequency Division Multiplexing) is achieved.

When used with a drain-to-source voltage of 12V the MGFC47B3538B has a saturated output power of 50W and a linear power gain of 10dB.

Owing to the lower power consumption of this new High Power Amplifier, smaller power supplies and heat sinks can be utilised, leading to a potential reduction in size and lower installation and operating costs of WiMAX Base Stations.

For more information on the full range of Mitsubishi Electric products available from Anglia please call +44 (0)1945 474747 or email info@anglia.com

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