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Ultra-miniature MOSFETs deliver cooler running than larger packaged devices
Diodes Incorporated has unveiled a portfolio of high performance MOSFETs packaged in the ultra-miniature DFN1006-3 package. Occupying just 0.6mm squared of PCB area, the package takes less than half the board space of equivalent SOT723 packaged parts and with a junction to ambient thermal resistance (Rthj-a) of 256ºC/W, supports up to 1A under continuous conditions, double that of comparable alternatives.
The resulting cooler running and space saving advantages of the MOSFETs coupled with an off-board height of only 0.4mm makes them particularly well suited to thin profile portable consumer electronics, including tablet PCs and smart phones. Both n-channel and p-channel devices are initially being offered by Diodes with breakdown voltage ratings of 20V, 30V and 60V for use in a variety of high reliability load switching, signal switching and boost conversion applications.
The 20V rated DMN2300UFB4 n-channel MOSFET for example displays a typical Rdson performance of just 150mΩ, more than 50% lower than competing solutions, helping to dramatically reduce conduction losses and power dissipation. Its p-channel companion, the 20V rated DMP21D0UFB4 offers a similar class-leading performance. Electrostatic discharge (ESD) ratings of these MOSFETs is also high, at respectively 2kV and 3kV.
For more information on the full range of Diodes Inc. products available from Anglia please email info@anglia.com
This news article was originally published in August 2011.