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Primary and secondary side Power MOSFETs from Taiwan Semiconductor enhance energy efficiency

Comprising of low, mid and high voltage versions, Taiwan Semiconductor’s various portfolios of N-channel Power MOSFETs deliver higher performance and improved efficiency.

HV Power MOSFETs: BVDS 450V~900V N-Channel
Features & Benefits
Taiwan Semiconductor’s HV Power MOSFET portfolio provides Low On-Resistance performance, low conduction losses and improved efficiency. Good di/dt rating allows excellent reliability and ensures avalanche ruggedness. The lower switching losses due to lower effective output capacitance allow high frequency in a switching application.

MV Power MOSFETs: BVDS 60V~200V N-Channel
LV Power MOSFETs: BVDS <60V
Features & Benefits
Taiwan Semiconductor’s Mid-Voltage and Low Voltage Power MOSFET portfolios are designed using advanced trench technology. Designed specifically to improve the efficiency of DC-DC converters and reduce switching losses by improved low gate charge, this high performance trench technology delivers extremely low RDS(on) and low gate charge performance that create extremely versatile devices and applications.

For more information, or details on the full range of Taiwan Semiconductor products available from Anglia, please email info@anglia.com

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