Supplier sections
Rate this page
You can now follow us on Blogger, Facebook, LinkedIn, Twitter, WordPress, Live Journal or You Tube by clicking on the logos below.
Anglia delivers by
STMicroelectronics introduces gapDRIVE with on-chip galvanic isolation: the new state-of-the-art in smart, integrated gate drivers
The STGAP1S advanced single-channel gate driver, launched by STMicroelectronics, integrates galvanic isolation with analog and logic circuitry in the same chip to help simplify driver design while ensuring high noise immunity for safe and reliable power control.
STGAP1S is the first in ST's new generation of gapDRIVE™ gate drivers, which combine proprietary bipolar-CMOS-DMOS (BCD) process technology with innovations that enable an isolation layer to be grown on-chip to allow even greater system integration. Up to 1500V can be present on the high-voltage rail without interfering with other circuitry, ensuring a level of robustness that makes this new device ideal for use in industrial drives, high-power 600V or 1200V inverters, solar inverters, and uninterruptible power supplies.
With signal-propagation delay of 100ns across the isolation layer, the STGAP1S is capable of transmitting high-accuracy PWM signals. The integrated driver stage can sink or source up to 5A, and has a rail-to-rail output that allows negative drive voltages for use with large IGBTs or wide-bandgap power switches, such as silicon-carbide MOSFETs. High common-mode transient immunity, in excess of ±50V/ns, allows reliable communication across the isolation layer and safe operation. Separate sink and source outputs enhance design flexibility and help eliminate external components.
The device also has a built-in SPI port, which provides an industry-standard host connection for configuring the control logic and monitoring status on the fly. The STGAP1S is able to provide rich digital diagnostics to the host via this interface, allowing enhanced system protection and reliability.
This intelligent driver also integrates an extensive set of protection features that help maximize reliability in harsh industrial environments. These include an active Miller clamp in the power stage to prevent unwanted transistor turn-on, desaturation detection to protect the power switch under short-circuit conditions, collector-emitter overvoltage protection and output two-level turn-off capability to prevent damaging voltage overshoot, over-temperature protection, Under-Voltage Lockout (UVLO), Over-Voltage Lockout (OVLO), and a dedicated sense pin for over-current detection.
The STGAP1S is packaged as fully integrated and compact SO24W device.
Requesting....
For a FREE STGAP1S sample please fill in the form below
| First name | * |
| Last name | * |
| Company | * |
| Telephone | * |
| Email Address | * |
| Project Name | |
| Project Volume | * |
For more information, or details on the full range of STMicroelectronics products available from Anglia, please email info@anglia.com
Delicious 
Digg
Reddit
Facebook
StumbleUpon
Google
Newsvine 
Yahoo
This news article was originally published in April 2015.
