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Introducing Advanced 4th Generation Technology SiC FETs from UnitedSiC, samples available from Anglia
UnitedSiC, a leading manufacturer of silicon carbide (SiC) power semiconductors, has launched the first four devices based on its advanced Gen 4 SiC FET technology platform. As the first and only 750V SiC FETs currently available on the market, these Gen 4 devices enable new performance levels, based on leadership Figures of Merit (FoM), that benefit a wide range of power applications.
These new 750V Gen 4 SiC FET devices are based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. Available in 18 and 60 mohm RDS(on) options, these new SiC FETs deliver unmatched FoMs with reduced on-resistance per unit area, and low intrinsic capacitance. In hard-switching applications, the Gen 4 FETs exhibit the lowest RDS(on) x EOSS (mohm-uJ) resulting in lower turn-on and turn-off loss. In soft-switching applications, their low RDS(on) x Coss(tr) (mohm-nF) specification provides lower conduction loss and higher frequency. These devices not only surpass existing competitive SiC MOSFET performance whether running cool (25°C) or hot (125°C), but also offer the lowest integral diode VF with excellent reverse recovery delivering low dead-time losses and increased efficiency.
FoM Comparison - RDS(on) x Area
The new 750V Gen 4 SiC FETs achieve the lowest conduction losses across useful temperature range, for a given footprint or package type, 65-75% less conduction losses @ 25°C and 45-70% less conduction losses @ 125°C. The devices are available in TO247-3L and TO247-4L (Kelvin source) packages.
In expanding UnitedSiC’s offering to 750V, the new devices offer more designer headroom and reduced design constraints. This higher VDS rating also makes these FETs beneficial for 400/500V bus voltage applications. With a widely compatible gate drive of ±20V, 5V Vth, all devices can be driven with 0 to +12V gate voltages. This means they work with existing SiC MOSFET, Si IGBTs and Si MOSFET gate drivers.
These 18 and 60 mohm, 750V FET devices are the first of many new Gen 4 device releases planned over the coming months that will further improve on cost-effectiveness, heat efficiency and design headroom. The range will support all sectors in overcoming the challenges of mass adoption and accelerate innovation.
Click below for a technical product overview of the new Gen 4 SiC FETs
The new UJ4C series of 750V Gen 4 FETs help address the challenges facing engineers working across sectors with the highest voltage and power demands in a wide range of applications including automotive, industrial charging, telecom rectifiers, datacentre PFC, and DC-DC conversion as well as renewable energy and energy storage.
Key Features
- Voltage rating: 750V
- Low RDS(on) from 18mohm to 60mohm
- Key Figures of Merit enable next gen, high-performance power designs
- Best-in-class RDS(on) x Area
- Improve the Qrr and Eon/Eoff losses at a given RDS(on)
- Reduce both Coss(er)/Eoss and Coss(tr)
- Excellent reverse recovery
- Excellent body diode performance (VF<2V)
- Low gate charge
- ESD protected, HBM class 2
- TO247-3L & TO247-4L (Kelvin) packages
- AEC-Q101 qualified
Click here for more information or to buy from Anglia Live.
Click here to download the UJ4C Technical Product Overview
Click here to download the UnitedSiC Product Selector Guide
Click here to read the SiC FET on-resistance variation with temperature blog
Anglia are offering customers FREE samples of the new UJ4C series 750V Gen 4 SiC FETs from UnitedSiC, please fill in the form below to register for your FREE samples now.
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To register for FREE samples of the new UJ4C series 750V Gen 4 SiC FETs from UnitedSiC, please fill in the form below
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Free samples are subject to availability.
For more information, or details on the full range of UnitedSiC products available from Anglia, please email info@anglia.com
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This news article was originally published in October 2021.
